SGM3055 Datasheet, PDF (1/6 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
SGM3055
15A, 30V,RDS(ON) 100m
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SOT-89 package is universally preferred for all
commercial industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
SOT-89
D
G
S
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current¹
Total Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID@TA=25 ^oC
ID@TA=100 ^oC
IDM
PD@TA=25 ^oC
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Thermal Resistance Junction-case
Max.
Max.
Symbol
Rthj-a
Rthj-c
Ratings
30
±20
15
9
50
15
-55~+150
Ratings
42
3
Unit
V
V
A
A
A
W
o_C
Unit
o_{C /W}
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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