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MMDT4413_15 Datasheet, PDF (2/5 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulated Transistors
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Elektronische Bauelemente
MMDT4413
NPN - PNP
Plastic-Encapsulated Transistors
PNP ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
COB
td
tr
ts
tf
Min.
-40
-40
5
-
-
-
30
60
100
100
20
-
-
-0.75
-
200
-
-
-
-
-
Max.
-
-
-
-0.1
-0.5
-0.1
-
-
-
300
-
-0.4
-0.75
-0.95
-1.3
-
8.5
15
20
225
30
Unit
V
V
V
μA
μA
μA
V
V
V
V
MHz
pF
nS
nS
nS
nS
Test Conditions
IC= -100 μA, IE=0
IC= -1 mA, IB=0
IE= -100 μA, IC=0
VCB= -50 V, IE=0
VCE= -35 V, IB=0
VEB= -5V, IC=0
VCE= -1V, IC= -0.1mA
VCE= -1V, IC= -1mA
VCE= -1V, IC= -10mA
VCE= -2V, IC= -150mA
VCE= -2V, IC= -500mA
IC= -150 mA, IB= -15mA
IC= -500 mA, IB= -50mA
IC= -150 mA, IB= -15mA
IC= -500 mA, IB= -50mA
VCE= -10V, IC= -20mA, f=100MHz
VCB=-10V, IE= 0, f=1MHz
VCC=-30 V, VBE=-2.0 V, IC=-150 mA, IB1=-15 mA
VCC=-30 V, IC=-150 mA, IB1 =-IB2 = -15 mA
http://www.SeCoSGmbH.com/
01-June-2005 Rev. B
Any changes of specification will not be informed individually.
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