MMDT4413_15 Datasheet, PDF (1/5 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulated Transistors

Elektronische Bauelemente
MMDT4413
NPN - PNP
Plastic-Encapsulated Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
z Complementary Pair
z Epitaxial Planar Die Construction
z Ideal for Low Power Amplification and Switching
MARKING
K13
EQUIVALENT CIRCUIT
.055(1.40)
.047(1.20)
SOT-363
8^o
.026TYP
0^o
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance. Junction to
Junction & Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
NPN Ratings
PNP Ratings
60
-40
40
-40
6
-5
0.6
-0.6
0.2
0.2
625
625
150, -55~150
Unit
V
V
V
A
W
°C/W
°C
NPN ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
Fall time
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
h_FE(4)
h_FE(5)
V_CE(sat)1
V_CE(sat)2
V_BE(sat)1
V_BE(sat)2
f_T
C_OB
t_d
t_r
t_s
t_f
Min.
60
40
6
-
-
-
20
40
80
100
40
-
-
0.75
-
250
-
-
-
-
-
Max.
-
-
-
0.1
0.5
0.1
-
-
-
300
-
0.4
0.75
0.95
1.2
-
6.5
15
20
225
30
Unit
V
V
V
μA
μA
μA
V
V
V
V
MHz
pF
nS
nS
nS
nS
Test Conditions
I_C= 100 μA, I_E=0
I_C= 1 mA, IB=0
I_E= 100 μA, I_C=0
V_CB= 50 V, I_E=0
V_CE= 35 V, I_B=0
V_EB= 5V, I_C=0
V_CE= 1V, I_C= 0.1mA
V_CE= 1V, I_C= 1mA
V_CE= 1V, I_C= 10mA
V_CE= 1V, I_C= 150mA
V_CE= 2V, I_C= 500mA
I_C=150 mA, I_B= 15mA
I_C=500 mA, I_B= 50mA
I_C= 150 mA, I_B= 15mA
I_C= 500 mA, I_B= 50mA
V_CE= 10V, I_C= 20mA, f=100MHz
V_CB=5V, I_E= 0, f=1MHz
V_CC=30 V, V_BE=2.0 V, I_C=150 mA, I_B1=15 mA
V_CC=30 V, I_C=150 mA, I_B1 =-I_B2 = 15 mA
http://www.SeCoSGmbH.com/
01-June-2005 Rev. B
Any changes of specification will not be informed individually.
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