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| MMDT3946_15 Datasheet, PDF (2/9 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Transistor | |||
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Elektronische Bauelemente
MMDT3946
NPN / PNP
Multi-Chip Transistor
ELECTRICAL CHARACTERISTICS OF NPN 3904 (TA=25°C)
CHARACTERISTIC
TEST CONDITION SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
IC=10μA, IE=0
IC = 1 mA, IB = 0
V(BR)CBO
V(BR)CEO
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
IE=10μA, IC=0
VCE =30Vdc, VEB=3Vdc
VCE =30Vdc, VEB=3Vdc
V(BR)EBO
IBL
ICEX
VCE=1V, IC=0.1mA
hFE(1)
DC Current Gain
VCE=1V, IC=1mA
VCE=1V, IC=10mA
hFE(2)
hFE(3)
VCE=1V, IC=50mA
hFE(4)
VCE=1V, IC=100mA
hFE(5)
Collector-emitter Saturation Voltage
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE(sat)1
VCE(sat)2
Base-Emitter Saturation Voltage
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VBE(sat)1
VBE(sat)2
Output Capacitance
VCB=5V, IE=0, f=1MHz
Cobo
Input Capacitance
VEB=0.5V, IC=0, f=1MHz
Cibo
Transition Frequency
Input Impedance
VCE=20V, IC=10mA, f=100MHz
fT
VCE =10Vdc, IC=1mAdc,
f=1.0 kHz
hie
Voltage Feeback Radio
VCE =10Vdc, IC=1mAdc,
f=1.0 kHz
hre
Small-Signal Current Gain
VCE =10Vdc, IC=1mAdc,
f=1.0 kHz
hfe
Output Admittance
Noise Figure
VCE =10Vdc, IC=1mAdc,
f=1.0 kHz
hoe
VCE=5V, IC=0.1mA, f=1kHz
Rs=1Kâ¦,
NF
Delay TIme
Rise Time
VCC=3V, VBE=0.5V,
Td
IC=10mA, IB1=1mA
Tr
Storage Time
Fall Time
VCC=3V,
Ts
IC=10mA, IB1=- IB2 = 1mA
Tf
MIN.
60
40
6
40
70
100
60
30
0.65
300
1
0.5
100
1
MAX.
50
50
UNIT
V
V
V
nAdc
nAdc
300
0.2
V
0.3
V
0.85
V
0.95
V
4
pF
8
pF
MHz
10
k ohms
8
x 10-4
400
40
μmhos
5
dB
35
nS
35
nS
200
nS
50
nS
http://www.SeCoSGmbH.com/
15-Jun-2012 Rev. F
Any changes of specification will not be informed individually.
Page 2 of 9
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