English
Language : 

MMDT3946_15 Datasheet, PDF (1/9 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Transistor
Elektronische Bauelemente
MMDT3946
NPN / PNP
Multi-Chip Transistor
RoHS Compliant Product
A suffix of “-C” indicates halogen-free.
FEATURE
 Complementary Pair
 One 3904-Type NPN
One 3906-Type PNP
 Epitaxial Planer Die Construction
 Ideal for Low Power Amplification and Switching
SOT-363
A
E
L
.B
MARKING
46
F
C
H
DG
K
J
PACKAGE INFORMATION
Package
MPQ
SOT-363
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min.
1.80
2.00
1.15
0.80
Max.
2.20
2.45
1.35
1.10
1.10 1.50
0.10 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
8°
0.650 TYP.
  
C2 B1 E1
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
Collector to Base Voltage
NPN
PNP
SYMBOL
VCBO
VALUE
60
-40
NPN
40
Collector to Emitter Voltage
VCEO
PNP
-40
NPN
6
Emitter to Base Voltage
VEBO
PNP
-5
NPN
0.2
Collector Currrent – Continuous
IC
PNP
-0.2
Collector Power Dissipation1
PD
150
Thermal Resistance, Junction to Ambient
RθJA
833
Junction Temperature
TJ
150
Storage Temperature
TSTG
-55~150
Note:
1. Device Mounted on FR4 glass epoxy printed circuit board using the minimum recommend footprint.
2. Pulse Test: Pulse Width 300μS, Duty Cycle 2.0%.
  
E2 B2 C1
E1, B1, C1 = PNP3906
E2, B2, C2 = NPN3904
UNITS
V
V
V
A
mW
°C/W
°C
°C
http://www.SeCoSGmbH.com/
15-Jun-2012 Rev. F
Any changes of specification will not be informed individually.
Page 1 of 9