MMBTA55_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – Driver Transistor

Elektronische Bauelemente
MMBTA55 / MMBTA56
PNP Silicon
Driver Transistor
ƔELECTRICAL CHARACTERISTICS (T_A = 25 к unless otherwise noted)
CHARACTERISTIC
SYMBOL
Min.
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage⁽³⁾
(IC = -1.0 mA, IB = 0)
Emitter - Base Breakdown Voltage
(IE = -100 µA, IC = 0)
Collector Cutoff Current
(VCE = -60 V, IB = 0 V)
Collector Cutoff Current
MMBTA55
MMBTA56
V(BR)CEO
V(BR)EBO
ICES
-60
-80
-4.0
-
(VCB = -60 V, IE = 0)
(VCB = -80 V, IE = 0)
MMBTA55
ICBO
-
MMBTA56
-
ON CHARACTERISTICS
DC Current Gain
(IC = -10 mA, VCE = -1.0 V)
hFE
100
(IC = -100 mA, VCE = -1.0 V)
100
Collector - Emitter Saturation Voltage
(IC = -100 mA, IB = -10 mA)
VCE(sat)
-
Base - Emitter Saturation Voltage
(IC = -100 mA, Vce = -1.0 V)
VBE(ON)
-
SMALL - SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product⁽⁴⁾
(IC = -100 mA, VCE = -1.0 V, f = 100 MHz)
fT
50
3. Pulse Test: Pulse Width ” 300 µs, Duty Cycle ” 2.0 %.
4. fT is defined as the frequency at which | hfe | extrapolates to unity.
Max.
-
-
-
-0.1
-0.1
-0.1
-
-
-0.25
-1.2
-
UNIT
V
V
nA
µA
-
V
V
MHz
5.0 ms
+10 V
0
t_r = 3.0 ns
TURN-ON TIME
-1.0 V
V_CC
+40 V
TURN-OFF TIME
+V_BB
V_CC
+40 V
100
V_in
R_B
5.0 mF
100
R_L
OUTPUT
* C_S t 6.0 pF
5.0 ms
t_r = 3.0 ns
100
V_in
R_B
5.0 mF
100
R_L
OUTPUT
* C_S t 6.0 pF
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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