MMBTA55_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – Driver Transistor

Elektronische Bauelemente
MMBTA55 / MMBTA56
PNP Silicon
Driver Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOT-23
3
1
2
C OLLE C TOR
3
1
BAS E
2
E MITTE R
A
L
3
Top View
1
2
BS
V
G
C
D
H
K
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
J
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ƔMAXIMUM RATINGS
RATING
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
MMBTA55
MMBTA56
MMBTA55
MMBTA56
Marking Code: MMBTA55:2H , MMBTA56:2GM
SYMBOL
VCEO
VCBO
VEBO
IC
VALUE
-60
-80
-60
-80
-4.0
-500
UNIT
V
V
V
mA
ƔTHERMAL CHARACTERISTICS
CHARACTERISTIC
Total Device Dissipation FR-5 Board⁽¹⁾ TA = 25 к
Derate Above 25 к
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate⁽²⁾, TA = 25 к
Derate Above 25 к
Thermal Resistance, Junction to Ambient
Operating and Storage Junction Temperature Range
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
SYMBOL
PD
RșJA
PD
RșJA
TJ, TSTG
MAX.
225
1.8
556
300
2.4
417
-55 ~ +150
UNIT
mW
mW / к
к/W
mW
mW / к
к/W
к
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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