MMBT589 Datasheet, PDF (2/3 Pages) Galaxy Semi-Conductor Holdings Limited – PNP General Purpose Transistor

Elektronische Bauelemente
MMBT589
PNP Silicon
General Purpose Transistor
200
VCE = -2.0 V
150
100
50
0
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain versus
Collector Current
230
210
190
170
150
130
110
90
70
50
1.0
125°C
VCE = -1.0 V
25°C
-55°C
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain versus
Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.0
VBE(sat)
VBE(on)
VCE(sat)
10
100
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
1.0
0.95
0.9
IC/IB = 10
0.85
0.8
0.75
0.7
IC/IB = 100
0.65
0.6
0.55
0.5
1000
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
1.0
0.8
0.6
1000 mA
0.4
100 mA
0.2
50 mA
10 mA
0
0.01
0.1
1.0
10
100
1000
IB, BASE CURRENT (mA)
Figure 5. Collector Emitter Saturation Voltage
versus Collector Current
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
1.8
1.6
1.4
IC/IB = 100
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
IC/IB = 10
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Collector Emitter Saturation Voltage
versus Collector Current
Any changing of specification will not be informed individual
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