MMBT589 Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – PNP General Purpose Transistor

Elektronische Bauelemente
MMBT589
PNP Silicon
General Purpose Transistor
FEATURES
3
1
2
1 Base
2
Emitter
Collector
3
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
L
3
Top View
1
2
BS
V
G
C
D
MAXIMUM RATINGS* T_A=25℃ unless otherwise noted
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
-50
V_CEO
Collector-Emitter Voltage
-30
V_EBO
Emitter-Base Voltage
-5
I_C
Collector Current -Continuous
-2
P_D
Total Device Dissipation
310
Rθ_JA
Thermal Resistance,junction to Ambient
403
T_J, T_stg
Junction and Storage Temperature
-55-150
H
K
Units
V
V
V
A
mW
℃/W
℃
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
J
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
MARKING :589
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V_(BR)CBO Ic=-100µA,I_E=0
-50
V
Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA,I_B=0
-30
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=-100µA,I_C=0
-5
V
Collector cut-off current
I_CBO V_CB=-30V,I_E=0
-0.1 µA
Collector-emitter cut-off current
I_CES
V_CES=-30V
-0.1 µA
Emitter cut-off current
I_EBO V_EB=-4V,I_C=0
-0.1 µA
h_FE1 V_CE=-2V,I_C=-1mA
100
DC current gain
h_FE2 V_CE=-2V,I_C=-500mA
h_FE3 V_CE=-2V,I_C=-1A
100
300
80
h_FE4 V_CE=-2V,I_C=-2A
40
V_CE(sat)1 I_C= -500mA, I_B=-50 mA
-0.25 V
Collector-emitter saturation voltage V_CE(sat)2 I_C= -1A, I_B=-100 mA
-0.3 V
V_CE(sat)3 I_C= -2A, I_B=-200 mA
-0.65 V
Base-emitter saturation voltage
V_BE(sat) I_C= -1A, I_B=-100 mA
-1.2 V
Base-emitter Turn-on voltage
V_BE(on) V_CE=-2V, I_C=-1A
-1.1 V
Transition frequency
f_T
V_CE=-5V, I_C=-100 mA ,
100
f =100MHz
MHz
Collector Output Capacitance
http://www.SeCoSGmbH.com
Cob
f=1MHZ
15 pF
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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