BC857S_15 Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

Elektronische Bauelemente
BC857S
PNP Silicon
Multi-Chip Transistor
250
200
(see Note 1)
150
100
50
0
0
100
200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve
0.5
I_C / I_B = 20
0.4
0.3
0.2
T_A = 150°C
0.1
T_A = 25°C
0
0.1
T_A = -50°C
1
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Fig. 3, Collector Saturation Voltage vs Collector Current
1000
T_A = 150°C
100
T_A = 25°C
T_A = -50°C
V_CE = -5V
10
1
1
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs Collector Current
T_A = 25°C
100
V_CE = -5V
10
1
10
100
I_C, COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs Collector Current
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
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