BC857S_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

Elektronische Bauelemente
BC857S
PNP Silicon
Multi-Chip Transistor
RoHS Compliant Product
* Features
Power dissipation
PCM : 0.3 W (Tamp.= 25^OC)
Collector current
ICM : -0.2 A
Collector-base voltage
V(BR)CBO : -50 V
Operating & Storage junction Temperature
Tj, Tstg : -55^OC~ +150 C^O
C₁
B2
E2
.055(1.40)
.047(1.20)
SOT-363
8^o
.026TYP
0^o
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Marking : 3C
E₁
B1
C2
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25^OC unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO
Ic=-10µA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-10mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=-10µA, IC=0
Collector cut-off current
ICBO
VCB=-30V, IE=0
DC current gain
hFE
VCE=-5V, IC=-2mA
Collector-emitter saturation voltage
VCE(sat)
VCE(sat)
IC=-10mA, IB=-0.5mA
I C=-100mA, IB=-5mA
Base-emitter voltage
VBE
VBE(1)
VCE=-5V, IC=-2mA
VCE=-5V, IC=-10mA
Transition frequency
fT
VCE=-5V, IC=-10mA , f=100MHz
Collector output capacitance
Noise figure
Cob
VCB=-10V, IE=0, f=1MHz
VCE=-5V, IC=-0.2mA
NF
F=1kHZ, RS=2K ,BW=200HZ
Note: 1 Short duration test pulse used to minimize self-heating effect.
MIN TYP MAX UNIT
-50
V
-45
V
-5
V
-15
nA
125
630
-0.3 V
-0.65 V
-0.6
-0.75 V
-0.82 V
200
MHz
3.5
pF
2.5
dB
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
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