2SC4115S Datasheet, PDF (2/2 Pages) Rohm – Low Frequency Transistor (20V, 3A)

Elektronische Bauelemente
2SC4115S
NPN Silicon
General Purpose Transistor
Electrical characteristic curves
10
VCE=2V
5
2
1
0.5
Ta=100°C
25°C
0.2
−40°C
0.1
0.05
0.02
0.01
5m
2m
1m
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
2
20mA
18mA
16mA
1.6 ^14mA
1.2
0.8
0.4
12mA
Ta=25°C
10mA
8mA
6mA
4mA
2mA
0
IB=0A
0
0.2
0.4
0.6
0.8
1.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( )
5 _50mA
45mA
40mA
4
3
2
1
35mA ^Ta=25°C
30mA
25mA
20mA
15mA
10mA
5mA
0
IB=0A
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( )
5000
2000
1000
500
Ta=100°C
25°C
−40°C
VCE=2V
200
100
50
20
10
5
1m 2m 5m0.010.02 0.05 0.10.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs.
collector current
2
IC/IB=10
1
0.5
0.2
Ta=100°C
0.1
25°C
50m
−40°C
20m
10m
5m
2m
1m 2m 5m10m20m50m0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter
saturation voltage vs.
collector current ( )
1
lC/lB=20
0.5
0.2
0.1
0.05
Ta=100°C
25°C
−40°C
0.02
0.01
5m
2m
1m
1m 2m 5m0.010.02 0.050.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter
saturation voltage vs.
collector current ( )
2
IC/IB=20
1
0.5
0.2
0.1
50m
Ta=100°C
25°C
−40°C
20m
10m
5m
2m
1m 2m 5m10m20m50m0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.7 Collector-emitter
saturation voltage vs.
collector current ( )
1000
500
Ta=25°C
VCE=2V
200
100
50
20
10
5
2
1
−1 −2 −5 −10 −20 −50 −100 −200 −500 −1000
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
1000
500
200
100
50
Ta=25°C
f=1MHz
IE=0A
IC=0A
Cob
Cob
20
10
0.1 0.2 0.5 1 2
5 10 20 50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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