2SC4115S Datasheet, PDF (1/2 Pages) Rohm – Low Frequency Transistor (20V, 3A)

Elektronische Bauelemente
2SC4115S
NPN Silicon
General Purpose Transistor
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92S
4.0±0.2
1.5±0.2
Power dissipation
PD:
0.3 W (Tamb=25 )
Collector current
I CM:
3A
Collector-base voltage
V(BR)CBO: 40 V
Operating and storage junction temperature range
T_{J, Tstg: -55 to +150}
0.4
6
+0 . 1
–0.1
0 . 4 3 ^+– _{00.. 0078}
(1.27 Typ.)
123
0.76±0.1
2.54±0.1
1: Emitter
2: Collector
3: Base
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= 50µA , IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1 mA , IB=0
20
Emitter-base breakdown voltage
V(BR)EBO
IE=50µA, IC=0
6
Collector cut-off current
ICBO
VCB=30V , IE=0
Emitter cut-off current
IEBO
VEB= 5V , IC=0
DC current gain
hFE
VCE=2 V, IC= 0.1A
120
Collector-emitter saturation voltage*
Transition frequency
z Measured Using Pulse Current
VCEsat
fT
IC= 2A, IB=0.1A
VCE=2V, IC=0.5 A
F=100MHz
200
MAX
0.1
0.1
560
0.5
UNIT
V
V
V
µA
µA
V
MHz
CLASSIFICATION OF h_FE
Rank
Range
Q
120-270
R
180-390
S
270-560
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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