2N7002KT_15 Datasheet, PDF (2/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET

Elektronische Bauelemente
2N7002KT
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Off Characteristics ²
Teat Conditions
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V(BR)DSS
60
-
-
IDSS
-
-
1
IGSS
-
-
±10
On Characteristics ²
V VGS =0, ID = 10µA
µA VDS =60V, VGS =0
µA VGS= ±20V, VDS=0
Gate Threshold Voltage
Static Drain-Source On Resistance
Forward transfer admittance ¹
VGS(th)
RDS(ON)
1
1.5
2
-
-
7.5
-
-
7.5
gfs
80
-
-
Dynamic Characteristics
V VDS=VGS, ID=250µA
VGS=10V, ID =0.5A
Ω
VGS=5V, ID =0.05A
mS VDS=10V, ID =0.2A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
-
25 50
Coss
-
10 25
Crss
-
3
5
Switching Characteristics
VDS=25V,
pF VGS=0,
f=1MHz
Turn-On Delay Time ¹
Td(ON)
-
Turn-Off Delay Time ¹
Td(OFF)
-
Note:
1. Pulse Test：pulse width ≦ 300µs, Duty cycle ≦ 2％
2. When mounted on a 1*0.75*0.062 inch glass epoxy board
12 20
VDD=30V,
VGS=10V,
nS ID=0.2A,
20 30
RG=10Ω,
RL=150Ω
http://www.SeCoSGmbH.com/
29-Apr-2013 Rev. A
Any changes of specification will not be informed individually.
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