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| 2N7002KT_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET | |||
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Elektronische Bauelemente
2N7002KT
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
FEATURES
Low Gate Charge for Fast Switching.
ESD Protected Gate.
SOT-523
APPLICATIONS
Power Management Load Switch
ESD Protected:1500V
Easily designed drive circuits
MARKING
RS
PACKAGE INFORMATION
Package
MPQ
SOT-523
3K
Leader Size
7 inch
REF.
A
B
C
D
G
J
Millimeter
Min. Max.
1.50 1.70
0.75 0.95
0.60 0.80
0.23 0.33
0.50BSC
0.10 0.20
REF.
K
M
N
S
Millimeter
Min. Max.
0.30
---
---
011.005oo0
1.50 1.70
MAXIMUM RATINGS (TA=25â unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage(Continuous)
Drain Current
Continuous
Pulsed
Reverse drain current
Continuous
Pulsed
Total Power Dissipation
Channel temperature
Operating Storage Temperature Range
Note
1. Pw â¦10 µs, Duty cycle â¦1 %
2. When mounted on a 1*0.75*0.062 inch glass epoxy board
VDSS
VGSS
ID
IDP1
IDr
IDRP1
PD2
TJ
TSTG
Rating
60
±20
115
800
115
800
225
150
-55~150
Unit
V
V
mA
mA
mW
°C
°C
http://www.SeCoSGmbH.com/
29-Apr-2013 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 3
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