MJE800 Datasheet, PDF (2/3 Pages) Fairchild Semiconductor – Monolithic Construction With Built-in Base- Emitter Resistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
MJE800/801/802/803
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
MJE800/801
MJE802/803
IC=50mA;IB=0
VCE_(sat)-1
Collector-emitter
saturation voltage
MJE800/802 IC=1.5A ;IB=30mA
MJE801/803 IC=2A ;IB=40mA
VCE_(sat)-2 Collector-emitter saturation voltage IC=4A ;IB=40mA
VBE-1
VBE-2
ICEO
ICBO
IEBO
Base-emitter
on voltage
MJE800/802 IC=1.5A ; VCE=3V
MJE801/803 IC=2A ; VCE=3V
Base-emitter
on voltage
IC=4A ; VCE=3V
Collector
cut-off current
MJE800/801 VCE=60V; IB=0
MJE802/803 VCE=80V; IB=0
Collector cut-off current
VCB=Rated BVCEO; IE=0
TC=100
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
hFE-2
DC current gain
MJE800/802 IC=1.5A ; VCE=3V
MJE801/803 IC=2A ; VCE=3V
IC=4A ; VCE=3V
MIN TYP. MAX UNIT
60
V
80
2.5
V
2.8
3.0
V
2.5
V
3.0
V
100
µA
100
500
µA
2
mA
750
100
2