MJE800 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Monolithic Construction With Built-in Base- Emitter Resistors

SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type MJE700/701/702/703
·High DC current gain
·DARLINGTON
APPLICATIONS
·Designed for general–purpose amplifier
and low–speed switching applications
PINNING (see Fig.2)
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Product Specification
MJE800/801/802/803
ABSOLUTE MAXIMUM RATINGS(T_C=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
MJE800/801
MJE802/803
Open emitter
VCEO
Collector-emitter voltage
MJE800/801
MJE802/803
Open base
VEBO
IC
IB
PC
T_j
T_stg
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
VALUE
60
80
60
80
5
4
0.1
40
150
-55~150
UNIT
V
V
V
A
A
W