MJE4350 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
MJE4350/4351/4352/4353
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MJE4350
VCEO(SUS)
Collector-emitter
sustaining voltage
MJE4351
MJE4352
IC=-100mA ;IB=0
MJE4353
VCE_(sat)-1 Collector-emitter saturation voltage IC=-8A ;IB=-0.8A
VCE_(sat)-2 Collector-emitter saturation voltage IC=-16A; IB=-2.0A
VBE_(sat) Base-emitter saturation voltage
IC=-16A; IB=-2.0A
VBE
Base-emitter on voltage
IC=-16A ; VCE=-4V
MJE4350 VCE=-50V; IB=0
ICEO
Collector
cut-off current
MJE4351
MJE4352
VCE=-60V; IB=0
VCE=-70V; IB=0
MJE4353 VCE=-80V; IB=0
ICEX
Collector cut-off current
VCE=RatedVCBO; VBE=-1.5V
TC=150
ICBO
Collector cut-off current
VCB=RatedVCB; IE=0
IEBO
Emitter cut-off current
VEB=-7V; IC=0
hFE-1
DC current gain
IC=-8A ; VCE=-2V
hFE-2
DC current gain
IC=-16A ; VCE=-4V
COB
Output capacitance
IE=0 ; VCB=-10V;f=0.1MHz
fT
Transition frequency
IC=-1A ; VCE=-20V;f=0.5MHz
MIN
-100
-120
-140
-160
15
8
1.0
TYP. MAX UNIT
V
-2.0
V
-3.5
V
-3.9
V
-3.9
V
-0.75 mA
-1.0
-5.0
mA
-0.75 mA
-1.0
mA
800
pF
MHz
2