MJE4350 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
MJE4350/4351/4352/4353
DESCRIPTION
·With TO-3PN package
·Respectively complement to type
MJE4340/4341/4342/4343
·DC current gain h_FE=8(Min)@I_C=16A
APPLICATIONS
·For use in high power audio amplifier
and switching regulator circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(T_C=25 )
SYMBOL
PARAMETER
CONDITIONS
MJE4350
VCBO
Collector-base
voltage
MJE4351
MJE4352
Open emitter
MJE4353
MJE4350
VCEO
Collector-emitter
voltage
MJE4351
MJE4352
Open base
MJE4353
VEBO
IC
ICM
Emitter-base voltage
Collector current
Collector current-peak
Open collector
IB
Base current
PC
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
THERMAL CHARACTERISTICS
TC=25
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-100
-120
-140
-160
-100
-120
-140
-160
-7
-16
-20
-5
125
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
1.0
UNIT
/W