BUJ403A Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUJ403A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0;L=25mH
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4 A
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.4 A
ICEO
Collector cut-off current
ICES
Collector cut-off current
IEBO
Emitter cut-off current
VCE =550V; IB=0;
VCE =VCESMmax; VBE=0;
T_j=125
VEB=7V; IC=0
hFE-1
DC current gain
IC=1mA;VCE=5V
hFE-2
DC current gain
IC=500mA;VCE=5V
hFEsat-1 DC current gain
IC=2A;VCE=5V
hFEsat-2 DC current gain
IC=3A;VCE=5V
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2.5A; IB1=-IB2=0.5 A
RL=75D,VBB2=4V
MIN TYP. MAX UNIT
550
V
0.15 1.0
V
0.91 1.5
V
0.1
mA
1.0
2.0
mA
0.1
mA
13
20
47
13
25
15.5
0.5
µs
3.0
µs
0.3
µs
2