BUJ403A Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUJ403A
DESCRIPTION
·With TO-220C package
·High voltage,high speed
APPLICATIONS
·Designed for use in high frequency
electronic lighting ballast applications,
converters,inverters,switching regulators,
motor control systems,etc
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
Open emitter
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
ICM
Collector current-peak
IB
Base current
IBM
Base current-peak
Ptot
Total power dissipation
Tmb125
Tj
Max.operating junction temperature
Tstg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-mb} Thermal resistance junction mounting base
VALUE
1200
550
7
6
10
3
5
100
150
-65~150
UNIT
V
V
V
A
A
A
A
W
MAX
1.25
UNIT
K/W