BU508DF Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU508DF
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
VCE_(sat) Collector-emitter saturation voltage IC=4.5A; IB=1.6A
VBE_(sat) Base-emitter saturation voltage
IC=4.5A ;IB=2A
IEBO
Emitter cut-off current
ICES
Collector cut-off current
hFE
DC current gain
VEB=5V; IC=0
VCB=BVCBO IE=0
TC=125
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
VF
Diode forward voltage
IF=4.5A
MIN TYP. MAX UNIT
700
V
1.0
V
1.1
V
300
mA
1.0
2.0
mA
10
30
7
MHz
125
pF
1.6
2.0
V
2