BU508DF Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU508DF
DESCRIPTION
·With TO-3PFa package
·High voltage,high speed
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection
circuits of colour TV receivers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
ABSOLUTE MAXIMUM RATINGS(T_C=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current (DC)
ICP
Collector current (Pulse)
IB
Base current (DC)
IBM
Base current (Pulse)
Ptot
Total power dissipation
TC=25
T_j
Max.operating junction temperature
T_stg
Storage temperature
VALUE
1500
700
5
8
15
4
6
34
150
-65~150
UNIT
V
V
V
A
A
A
A
W