BU406 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,150-200V,60W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU406 BU407
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BU406
BU407
IC=100mA ; IB=0
VCEsat
VBEsat
ICES
IEBO
hFE
fT
COB
tf
Collector-emitter saturation voltage IC=5A ;IB=0.5A
Base-emitter saturation voltage
IC=5A ;IB=0.5A
Collector cut-off current
BU406
BU407
VCE=400V; VBE=0
VCE=330V; VBE=0
Emitter cut-off current
VEB=6.0V; IC=0
DC current gain
IC=2A ; VCE=5V
Transition frequency
IC=0.5A ;VCE=10V;f=1.0MHz
Output capacitance
Fall time
IE=0 ;VCB=10V;f=1.0MHz
IC=5A ;VCC=40V
IB1 =-IB2=0.6A;L=150µH
MIN TYP. MAX UNIT
200
V
150
1.0
V
1.2
V
5
mA
1.0
mA
40
120
10
MHz
80
pF
0.75
µs
2