BU406 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,150-200V,60W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU406 BU407
DESCRIPTION
·With TO-220C package
·High voltage;high speed
·Low collector saturation voltage
APPLICATIONS
·For use in horizontal deflection output
stages of TV’s and CTV’s circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
BU406
BU407
Open emitter
VCEO
Collector-emitter voltage
BU406
BU407
Open base
VEBO
IC
ICM
IB
Ptot
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
400
330
200
150
6
7
10
4
60
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
2.08
UNIT
/W