BU326 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(6A,375-400V,75W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU326 BU326A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BU326
BU326A
IC=0.1A; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=2.5 A;IB=0.5A
VCEsat-2 Collector-emitter saturation voltage IC=4A;IB=1.25 A
VBEsat-1 Base-emitter saturation voltage
IC=2.5 A;IB=0.5A
VBEsat-2 Base-emitter saturation voltage
IC=4A;IB=1.25 A
BU326 VCE=800V;VBE=0
ICES
Collector cut-off current
BU326A VCE=900V;VBE=0
IEBO
Emitter cut-off current
VEB=10V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition frequency
IC=0.2A ; VCE=10V; f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2.5A ;
IB1=0.5A;IB2=-1A
VCC=250V ;
MIN TYP. MAX UNIT
375
V
400
1.5
V
3.0
V
1.4
V
1.6
V
1
mA
25
4.0
10
mA
MHz
0.5
µs
3.5
µs
0.5
µs
2