BU326 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(6A,375-400V,75W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU326 BU326A
DESCRIPTION
·With TO-3 package
·High voltage;high speed
·Low collector saturation voltage.
APPLICATIONS
·Intended for operating in CTV receiver’s
chopper supplies.
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
BU326
BU326A
Open emitter
VCEO
Collector-emitter voltage
BU326
BU326A
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
ICM
Collector current-peak
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
TC=25
VALUE
800
900
375
400
10
6
8
3
75
-65~200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
MAX
2.33
UNIT
/W