BU2506DX Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2506DX
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=600mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=3.0A ;IB=0.79 A
VBEsat
Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=3.0A ;IB=0.79 A
VCE=BVCES; VBE=0
TC=125
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=0.3 A ; VCE=5V
hFE-2
DC current gain
IC=3.0A ; VCE=5V
VF
Diode forward voltage
IF=3.0A
CC
Collector capacitance
VCB=10V;IE=0;f=1.0MHz
MIN TYP. MAX UNIT
700
V
7.5
V
5.0
V
1.1
V
1.0
2.0
mA
136
mA
12
3.8
5.5
7.5
1.6
2.0
V
47
pF
2