BU2506DX Datasheet, PDF (1/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2506DX
DESCRIPTION
·With TO-3PML package
·High voltage;high speed
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
Open emitter
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current (DC)
ICP
Collector current (Pulse)
IB
Base current (DC)
IBM
Base current (Pulse)
Ptot
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
TC=25
VALUE
1500
700
7.5
5
8
3
5
45
150
-55~150
UNIT
V
V
V
A
A
A
A
W