BDX33 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,70W)

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX33
VCEO(SUS)
Collector-emitter
sustaining voltage
BDX33A
BDX33B
IC=0.1A, IB=0
BDX33C
VCEsat
VBE
ICBO
ICEO
IEBO
hFE
VF
Collector-emitter
saturation voltage
BDX33/33A IC=4A ,IB=8mA
BDX33B/33C IC=3A ,IB=6mA
Base-emitter
on voltage
BDX33/33A
IC=4A ; VCE=3V
BDX33B/33C IC=3A ; VCE=3V
BDX33
VCB=45V, IE=0
Collector
cut-off current
BDX33A
BDX33B
VCB=60V, IE=0
VCB=80V, IE=0
BDX33C
VCB=100V, IE=0
BDX33
VCE=22V, IB=0
Collector
cut-off current
BDX33A
BDX33B
VCE=30V, IB=0
VCE=40V, IB=0
BDX33C
VCE=50V, IB=0
Emitter cut-off current
VEB=5V; IC=0
DC current gain
BDX33/33A
IC=4A ; VCE=3V
BDX33B/33C IC=3A ; VCE=3V
Forward diode voltage
IF=8A
Product Specification
BDX33/A/B/C
MIN TYP. MAX UNIT
45
60
V
80
100
2.5
V
2.5
V
0.2
mA
0.5
mA
5
mA
750
4.0
V
2