BDX33 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,70W)

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BDX33/A/B/C
DESCRIPTION
·With TO-220C package
·High DC current gain
·DARLINGTON
·Complement to type BDX34/A/B/C
APPLICATIONS
·For power linear and switching
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
BDX33
VCBO
Collector-base voltage
BDX33A
BDX33B
BDX33C
BDX33
VCEO
BDX33A
Collector-emitter voltage
BDX33B
BDX33C
VEBO
IC
ICM
IB
PC
Tj
Tstg
Emitter-base voltage
Collector current-DC
Collector current-Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
45
60
80
100
45
60
80
100
5
10
15
0.25
70
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
1.78
UNIT
/W