BD941F Datasheet, PDF (2/3 Pages) NXP Semiconductors – SILICON EPITAXIAL BASE POWER TRANSISTORS

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD941F
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.2A
ICBO
Collector cut-off current
VCB=140V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=0.2A ; VCE=4V
hFE-2
DC current gain
IC=1A ; VCE=4V
fT
Transition frequency
IC=0.25A ; VCE=10V
MIN TYP. MAX UNIT
140
V
7
V
0.7
V
1.5
V
50
µA
50
µA
40
250
15
3
MHz
2