BD941F Datasheet, PDF (1/3 Pages) NXP Semiconductors – SILICON EPITAXIAL BASE POWER TRANSISTORS

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD941F
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
APPLICATIONS
·For power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
IC
Collector current
ICM
Collector current-Peak
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
140
140
7
3
6
14
150
-50~150
UNIT
V
V
V
A
A
W