BD246 Datasheet, PDF (2/3 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD246/A/B/C
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD246
VCEO
Collector-emitter
breakdown voltage
BD246A
BD246B
IC=30mA ;IB=0
BD246C
VCEsat-1
VCEsat-2
VBE-1
VBE-2
ICEO
Collector-emitter saturation voltage
IC=-3A ;IB=-0.3A
Collector-emitter saturation voltage
IC=-10A ;IB=-2.5A
Base-emitter on voltage
IC=-3A ; VCE=-4V
Base-emitter on voltage
IC=-10A ; VCE=-4V
Collector
cut-off current
BD246/246A
VCE=-30V; IB=0
BD246B/246C VCE=-60V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-4V
hFE-2
DC current gain
hFE-3
DC current gain
Switching times
IC=-3A ; VCE=-4V
IC=-10A ; VCE=-4V
ton
Turn-on time
toff
Turn-off time
IC=-1A;
IB1=-IB2=-0.1A
RL=20>
MIN
-45
-60
-80
-100
TYP.
MAX UNIT
V
-1.0
V
-4.0
V
-1.6
V
-3.0
V
-0.7
mA
-1
mA
40
20
4
0.2
µs
0.8
µs
2