BD246 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD246/A/B/C
DESCRIPTION
·With TO-3PN package
·Complement to type BD245/A/B/C
APPLICATIONS
·For use in medium power linear
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
BD246
VCBO
Collector-base voltage
BD246A
BD246B
BD246C
BD246
VCEO
BD246A
Collector-emitter voltage
BD246B
BD246C
VEBO
IC
ICM
Emitter-base voltage
Collector current
Collector current-peak
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-55
-70
-90
-115
-45
-60
-80
-100
-5
-10
-15
-3
80
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
1.56
UNIT
/W