2SD669 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SD669
2SD669A
IC=10mA; RBE=B
V(BR)CBO
Collector-base
breakdown voltage
2SD669
2SD669A
IC=1m A ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50mA
VBE
Base-emitter on voltage
IC=150mA ; VCE=5V
ICBO
Collector cut-off current
VCB=160V; IE=0
hFE-1
DC current gain
2SD669
2SD669A
IC=150mA ; VCE=5V
hFE-2
fT
COB
DC current gain
Transition frequency
Collector output capacitance
IC=0.5A ; VCE=5V
IC=150mA ; VCE=5V
f=1MHz ; VCB=10V
h_FE Classifications
h_FE-1
B
C
2SB649 60-120 100-200
2SB649A 60-120 100-200
D
160-320
Product Specification
2SD669 2SD669A
MIN TYP. MAX UNIT
120
V
160
180
V
180
5
V
1.0
V
1.5
V
10
µA
60
320
60
200
30
140
MHz
14
pF
2