2SD669 Datasheet, PDF (1/5 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD669 2SD669A
DESCRIPTION
·With TO-126 package
·Complement to type 2SB649/649A
·High breakdown voltage V_CEO:120/160V
·High current 1.5A
·Low saturation voltage,excellent h_FE linearity
APPLICATIONS
·For low-frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SD669
2SD669A
Open emitter
VCEO
Collector-emitter voltage
2SD669
2SD669A
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current (DC)
ICM
Collector current-peak
PD
Total power dissipation
Tj
Junction temperature
Ta=25
TC=25
Tstg
Storage temperature
VALUE
180
180
120
160
5
1.5
3
1
20
150
-55~150
UNIT
V
V
V
A
A
W