2SD1060 Datasheet, PDF (2/4 Pages) Unisonic Technologies – NPN EPITAXIAL PLANAR SILICON TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1061
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE==
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4A, IB=0.4A
ICBO
Collector cut-off current
VCB=40V;IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=5A ; VCE=2V
fT
Transition frequency
IC=1A ; VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2A IB1=- IB2=0.2A
VCC=20V;RL=10D
h_FE-1 classifications
Q
R
S
70-140 100-200 140-280
MIN TYP. MAX UNIT
50
V
60
V
6
V
0.4
V
0.1
mA
0.1
mA
70
280
30
10
MHz
0.2
µs
0.9
µs
0.3
µs
2