2SD1060 Datasheet, PDF (1/4 Pages) Unisonic Technologies – NPN EPITAXIAL PLANAR SILICON TRANSISTOR

SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Wide ASO(safe operating area)
·Complement to type 2SB825
APPLICATIONS
·Universal high current switching as
solenoid driving,
·High speed inverter and converter.
relay drivers
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SD1061
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICP
PC
Tj
Emitter-base voltage
Collector current (DC)
Collector current-peak
Collector power dissipation
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
60
50
6
7
12
40
150
-55~150
UNIT
V
V
V
A
A
W