2SC2613 Datasheet, PDF (2/4 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2613
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ,RBE=:,L=100mH
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A
VBEsat Base-emitter saturation voltage
IC=2.5A; IB=0.5A
ICBO
Collector cut-off current
VCB=400V; IE=0
ICEO
Collector cut-off current
VCE=350V; RBE=:
hFE-1
DC current gain
IC=2.5A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=5.0A IB1=- IB2=1A
VCC?150V
MIN TYP. MAX UNIT
400
V
7
V
1.0
V
1.5
V
100
µA
100
µA
15
7
1.0
µs
1.2
2.5
µs
1.0
µs
2