2SC2613 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2613
DESCRIPTION
·With TO-220 package
·High collector breakdown voltage
: V_CEO=400V(Min)
APPLICATIONS
·For high voltage ,high speed and
high power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
500
400
7
5
10
2.5
40
150
-55~150
UNIT
V
V
V
A
A
A
W