2N6371 Datasheet, PDF (2/3 Pages) Central Semiconductor Corp – POWER TRANSISTORS TO-3 CASE

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6371
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=8A ;IB=0.8A
VCEsat-2 Collector-emitter saturation voltage IC=16A; IB=4A
VBE
Base-emitter on voltage
IC=16A ; VCE=4V
ICEO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCE=25V; IB=0
VCE=45V;VBE(off)=1.5V
VCE=40V;VBE(off)=1.5V;TC=150
VEB=5V; IC=0
hFE-1
DC current gain
IC=8A ; VCE=4V
hFE-2
DC current gain
IC=16A ; VCE=4V
fT
Transition freuqency
IC=1A ; VCE=4V
40
V
1.5
V
4.0
V
4.0
V
1.5 mA
2.0
10.0
mA
10
mA
15
60
4
0.8
MHz
2