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2N6371 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – POWER TRANSISTORS TO-3 CASE
SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High dissipation capability
·Excellent safe operating area
APPLICATIONS
·Series and shunt regulators
·High-fidelity amplifiers
·Power-switching circuits
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Product Specification
2N6371
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PD
Total Power Dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
50
40
5
15
7
117
200
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.5
UNIT
/W