2N6338 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTOR(25A,200W)

SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6338
V(SUS)CEO
Collector-emitter
sustaining voltage
2N6339
2N6340
IC=50mA ;IB=0
2N6341
VCEsat-1
VCEsat-2
VBE sat-1
VBE sat-2
VBE
ICEX
ICBO
ICEO
IEBO
hFE-1
hFE-2
hFE-3
COB
fT
tr
ts
tf
Collector-emitter saturation voltage IC=10A; IB=1.0A
Collector-emitter saturation voltage IC=25A; IB=2.5A
Base-emitter saturation voltage
IC=10A; IB=1.0A
Base-emitter saturation voltage
IC=25A; IB=2.5A
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
IC=10A ; VCE=2V
VCE=Rated VCEO; VEB=1.5V
TC=150
VCB=Rated VCB; IE=0
2N6338 VCE= 50V,IB=0
Collector
cut-off current
2N6339 VCE= 60V,IB=0
2N6340 VCE= 70V,IB=0
2N6341 VCE= 75V,IB=0
Emitter cut-off current
VEB=6V; IC=0
DC current gain
IC=0.5A ; VCE=2V
DC current gain
IC=10A ; VCE=2V
DC current gain
IC=25A ; VCE=2V
Output capacitance
IE=0 ; VCB=10V;f=0.1MHz
Transition frequency
IC=1A ; VCE=10V;f=10MHz
Rise time
VCC=80V,IC=10A,IB1=1A ;VBE=1.5V
Storage time
Fall times
VCC=80V,IC=10A,IB1=IB2=1A
MIN
TYP.
MAX
UNI
T
100
120
V
140
150
1.0
V
1.8
V
1.8
V
2.5
V
1.8
V
10 µA
1.0 mA
10 µA
50 µA
100 µA
50
30
120
12
300 pF
40
MHz
0.3 µs
1.0 µs
0.25 µs
2