2N6338 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTOR(25A,200W)

SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341
DESCRIPTION
·With TO-3 package
·Fast switching times
·Low collector saturation voltage
·Complement to type 2N6436~38
APPLICATIONS
·For use in industrial-military power amplifier
and switching circuit applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
F
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6338
VCBO
Collector-base voltage
2N6339
2N6340
2N6341
2N6338
VCEO
2N6339
Collector-emitter voltage
2N6340
2N6341
VEBO
IC
ICM
Emitter-base voltage
Collector current
Collector current-peak
IBC
Base current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
120
140
160
180
100
120
140
150
6
25
50
10
200
200
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
0.875
UNIT
/W