2N6300 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6300 2N6301
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6300
2N6301
IC=0.1A ; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=16mA
VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=80mA
VBEsat
Base-emitter saturation voltage
IC=8A; IB=80mA
VBE
Base -emitter on voltage
IC=4A ; VCE=3V
2N6300
VCE=60V; VBE(off)=1.5V
TC=150
ICEX
Collector cut-off current
2N6301
VCE=80V; VBE(off)=1.5V
TC=150
2N6300 VCE=30V; IB=0
ICEO
Collector cut-off current
2N6301 VCE=40V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=4A ; VCE=3V
hFE-2
DC current gain
IC=8A ; VCE=3V
COB
Output capacitance
IE=0 ; VCB=10V;f=0.1MHz
MIN TYP. MAX UNIT
60
V
80
2.0
V
3.0
V
4.0
V
2.8
V
0.5
5.0
mA
0.5
5.0
0.5
mA
2.0
mA
750
18000
100
200
pF
2