2N6300 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6300 2N6301
DESCRIPTION
·With TO-66 package
·DARLINGTON
·Low collector saturation voltage
·Complement to type 2N6298/6299
APPLICATIONS
·General purpose power amplifier and
low frequency switching applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N6300
2N6301
VCEO
Collector-emitter voltage
2N6300
2N6301
VEBO
IC
ICM
IB
PT
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
VALUE
60
80
60
80
5
8
16
0.12
75
200
-65~200
UNIT
V
V
V
A
A
A
W
MAX
2.33
UNIT
/W