2N6058 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6058 2N6059
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6058
2N6059
IC=0.1A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=6A ;IB=24mA
VCEsat-2 Collector-emitter saturation voltage IC=12A ;IB=120mA
VBEsat Base-emitter saturation voltage
IC=12A ;IB=120mA
VBE
Base-emitter on voltage
IC=6A ; VCE=3V
2N6058 VCE=40V; IB=0
ICEO
Collector cut-off current
2N6059 VCE=50V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=6A ; VCE=3V
hFE-2
DC current gain
IC=12A ; VCE=3V
fT
Trainsistion frequency
IC=5A ;VCE=3V;f=1MHz
MIN
TYP. MAX UNIT
80
V
100
2.0
V
3.0
V
4.0
V
2.8
V
1.0
mA
2.0
mA
750
100
4
MHz
2