2N6058 Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6058 2N6059
DESCRIPTION
·With TO-3 package
·High current ;high dissipation
·DARLINGTON
·Complement to type 2N5883;2N5884
APPLICATIONS
·They are intended for use in power linear
and low frequency switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N6058
2N6059
VCEO
Collector-emitter voltage
2N6058
2N6059
VEBO
IC
ICM
IB
PD
Tj
Tstg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
80
100
80
100
5
12
20
0.2
150
200
-65~200
UNIT
V
V
V
A
A
mA
W
VALUE
1.17
UNIT
/W