2N5739 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5739 2N5740
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2N5739
-60
VCEO(SUS)
Collector-emitter
sustaining voltage
IC=-0.2A ;IB=0
V
2N5740
-100
VCEsat-1 Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VCEsat-2 Collector-emitter saturation voltage IC=-10A ;IB=-2.5A
VBEsat
Base-emitter saturation voltage
IC=-10A ;IB=-2.5A
VBE
Base-emitter on voltage
IC=-4A ; VCE=-4V
ICBO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCB=Rated VCBO; IE=0
VCE= Rated VCEO; VBE(off)=1.5V
TC=150
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-5A ; VCE=-5V
20
hFE-2
DC current gain
IC=-10A ; VCE=-5V
4
fT
Transition frequency
IC=-0.5A ; VCE=-10V
10
-1.0
V
-3.0
V
-2.5
V
-1.5
V
-0.1 mA
-0.5
-5.0
mA
-1.0 mA
80
MHz
2